Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/Input capacitance (Cies): 2nF @25V
Technical parameters/rated power (Max): 225 W
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 24
Encapsulation parameters/Encapsulation: E2
External dimensions/packaging: E2
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MUBW35-12E7
|
IXYS Semiconductor | 功能相似 | E2 |
MODULE IGBT CBI E2
|
||
MUBW50-12A8
|
IXYS Semiconductor | 功能相似 | E3 |
Trans IGBT Module N-CH 1200V 85A 350000mW 24Pin
|
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