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Model MUBW50-12A8
Description Trans IGBT Module N-CH 1200V 85A 350000mW 24Pin
Product QR code
Brand: IXYS Semiconductor
Packaging E3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
1105.91  yuan 1105.91yuan
1+:
$ 1216.5054
10+:
$ 1205.4463
25+:
$ 1199.9167
50+:
$ 1194.3871
100+:
$ 1188.8576
150+:
$ 1183.3280
250+:
$ 1177.7984
500+:
$ 1172.2688
Quantity
1+
10+
25+
50+
100+
Price
$1216.5054
$1205.4463
$1199.9167
$1194.3871
$1188.8576
Price $ 1216.5054 $ 1205.4463 $ 1199.9167 $ 1194.3871 $ 1188.8576
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7612) Minimum order quantity(1)
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Technical parameters/dissipated power: 350000 mW

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/Input capacitance (Cies): 3.3nF @25V

Technical parameters/rated power (Max): 350 W

Technical parameters/operating temperature (Max): 125 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 350000 mW

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 24

Encapsulation parameters/Encapsulation: E3

External dimensions/packaging: E3

Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MUBW35-12E7 MUBW35-12E7 IXYS Semiconductor 功能相似 E2
MODULE IGBT CBI E2
PDF
MUBW50-12E8 MUBW50-12E8 IXYS Semiconductor 功能相似 E3
Trans IGBT Module N-CH 1200V 90A 350000mW 24Pin
PDF

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