Technical parameters/frequency: 325 MHz
Technical parameters/rated power: 0.25 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 50 @1mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF550
|
Siemens Semiconductor | 类似代替 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550
|
Kexin | 类似代替 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
|||
BF550
|
NXP | 类似代替 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550,215
|
Nexperia | 功能相似 | SOT-23-3 |
PNP 晶体管，NXP ### 双极性晶体管，NXP Semiconductors
|
||
BF550,235
|
NXP | 完全替代 | SOT-23-3 |
TRANS PNP 40V 0.025A SOT23
|
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