Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.025A
Technical parameters/minimum current amplification factor (hFE): 50 @1mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF550
|
Siemens Semiconductor | 类似代替 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550
|
Kexin | 类似代替 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
|||
BF550
|
NXP | 类似代替 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550,215
|
Nexperia | 类似代替 | SOT-23-3 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
|
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