Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | −40V |
|
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | −40V |
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Other/collector continuous output current ICCollector Current (IC): | −25mA |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 375MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 15 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | -10V |
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Other/dissipated power PcPoWer Dissipation: | 110mW/0.11W |
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Other/Specification PDF: | __ |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF550
|
Siemens Semiconductor | 功能相似 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550
|
Kexin | 功能相似 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
|||
BF550
|
NXP | 功能相似 | SOT-23 |
NXP BF550 晶体管 双极-射频, PNP, -40 V, 325 MHz, 250 mW, -25 mA, 50 hFE 新
|
||
BF550,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia BF550,215 , PNP 晶体管, 25 mA, Vce=40 V, HFE:50, 325 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
||
BF550,235
|
NXP | 功能相似 | SOT-23-3 |
TO-236AB PNP 40V 0.025A
|
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