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Model BD137
Description Power transistor NPN silicon POWER TRANSISTORS NPN Silicone
Product QR code
Brand: ON Semiconductor
Packaging TO-126-3
Delivery time
Packaging method Box
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4589) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 1.50 A

Technical parameters/polarity: NPN

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/maximum allowable collector current: 1.5A

Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V

Technical parameters/Maximum current amplification factor (hFE): 250

Technical parameters/rated power (Max): 1.25 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 1250 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-126-3

External dimensions/packaging: TO-126-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Box

Other/Minimum Packaging: 500

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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BD137 BD137 NXP 功能相似 SIP
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BD137 BD137 Fairchild 功能相似
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
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BD137 BD137 CDIL 功能相似
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
BD137 BD137 ON Semiconductor 功能相似 TO-126-3
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
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BD137-BP BD137-BP Micro Commercial Components 功能相似 TO-126
TO-126 NPN 60V 1.5A

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