Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-126 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
|
|
NXP | 功能相似 | SIP |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
|
|
Fairchild | 功能相似 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
|||
BD137
|
CDIL | 功能相似 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
|||
BD137
|
ON Semiconductor | 功能相似 | TO-126-3 |
功率晶体管NPN硅 POWER TRANSISTORS NPN SILICON
|
||
BD13710STU
|
Fairchild | 功能相似 | TO-126-3 |
FAIRCHILD SEMICONDUCTOR BD13710STU 单晶体管 双极, NPN, 60 V, 12.5 W, 1.5 A, 63 hFE
|
||
BD13710STU
|
ON Semiconductor | 功能相似 | TO-126-3 |
FAIRCHILD SEMICONDUCTOR BD13710STU 单晶体管 双极, NPN, 60 V, 12.5 W, 1.5 A, 63 hFE
|
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