Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 1500mA |
|
Technical parameters/minimum current amplification factor (hFE): | 40 |
|
Technical parameters/maximum current amplification factor (hFE): | 250 |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-126 |
|
Dimensions/Packaging: | TO-126 |
|
Other/Minimum Packaging: | 60 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
CJ | 功能相似 | TO-126 |
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
|
||
|
|
NXP | 功能相似 | SIP |
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
|
||
|
|
Fairchild | 功能相似 |
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
|
|||
BD137
|
CDIL | 功能相似 |
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
|
|||
BD137
|
ON Semiconductor | 功能相似 | TO-126-3 |
12.5W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.5A Ic, 40 - 250 hFE. Complementary BD138
|
||
BD137-BP
|
Micro Commercial Components | 功能相似 | TO-126 |
TO-126 NPN 60V 1.5A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review