Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 2000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 220 MHz
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAT721A
|
Nexperia | 完全替代 | SOT-23 |
NXP BAT721A 小信号肖特基二极管, 双共阳极, 40 V, 200 mA, 550 mV, 1 A, 150 °C
|
||
BCV46,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia BCV46,215 PNP 达林顿晶体管对, -500 mA, Vce=60 V, HFE=2000, 3引脚 SOT-23 (TO-236AB)封装
|
||
|
|
LGE | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
GMR Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
Diotec Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
National Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907A
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Kexin | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Bourns J.W. Miller | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
MDD | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
||
|
|
Infineon | 功能相似 |
FAIRCHILD SEMICONDUCTOR MMBT2907A 单晶体管 双极, 通用, PNP, 60 V, 200 MHz, 350 mW, 800 mA, 300 hFE
|
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