Technical parameters/dissipated power: 250 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858C
|
VISHAY | 完全替代 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC858C
|
Panjit | 完全替代 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC858CLT1G
|
ON Semiconductor | 功能相似 | SOT-23 |
ON SEMICONDUCTOR BC858CLT1G 单晶体管 双极, 通用, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
||
|
|
Philips | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Kexin | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
NXP | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC859BMTF
|
Rochester | 功能相似 | SOT-23 |
PNP外延硅晶体管 PNP Epitaxial Silicon Transistor
|
||
BC859C
|
VISHAY | 功能相似 | 3 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC859C
|
Diotec Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC859C
|
NXP | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 30V; 100mA; 0.25W(1/4W); SOT23
|
||
BC860C
|
NXP | 完全替代 | SOT-23 |
NXP BC860C 单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
||
BC860C
|
Kexin | 完全替代 |
NXP BC860C 单晶体管 双极, 通用, PNP, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
|
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