Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): -30V
Technical parameters/maximum allowable collector current: -0.1A
Technical parameters/minimum current amplification factor (hFE): 420
Technical parameters/Maximum current amplification factor (hFE): 800
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC858CLT1G
|
ON Semiconductor | 功能相似 | SOT-23 |
ON SEMICONDUCTOR BC858CLT1G 单晶体管 双极, 通用, PNP, -30 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
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