Technical parameters/frequency: 150 MHz
Technical parameters/rated voltage (DC): -65.0 V
Technical parameters/rated current: -100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 800
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC556BTFR
|
Fairchild | 类似代替 | TO-226-3 |
PNP 晶体管,60 至 160V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
BC556BTFR
|
ON Semiconductor | 类似代替 | TO-226-3 |
PNP 晶体管,60 至 160V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
|
|
Infineon | 类似代替 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC558C
|
General Semiconductor | 类似代替 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BC558C
|
Fairchild | 类似代替 | TO-92-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC558C
|
Rochester | 类似代替 | TO-92 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BC558C
|
Micro Electronics | 类似代替 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
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