Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 500 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 420 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 800
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 110
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2013/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC33725TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
BC556BTF
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC556BTF 单晶体管 双极, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 200 hFE
|
||
BC558-C
|
Siemens Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
|
|||
BC559CTA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC559CTA 单晶体管 双极, PNP, -30 V, 150 MHz, 500 mW, -100 mA, 420 hFE
|
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