Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC33725TA
|
ON Semiconductor | 功能相似 | TO-226-3 |
ON Semiconductor BC33725TA , NPN 晶体管, 800mA, Vce=45 V, HFE:100, 100 MHz, 3引脚 TO-92封装
|
||
BC556BTF
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR BC556BTF 单晶体管 双极, PNP, -65 V, 150 MHz, 500 mW, -100 mA, 200 hFE
|
||
BC558-C
|
Siemens Semiconductor | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
|
|||
BC559CTA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC559CTA 单晶体管 双极, PNP, -30 V, 150 MHz, 500 mW, -100 mA, 420 hFE
|
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