Technical parameters/dissipated power: 625 mW
Technical parameters/gain bandwidth product: 100 MHz
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Roll, Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
General Semiconductor | 类似代替 |
PNP 硅晶体管
|
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|
|
Tigal | 类似代替 |
PNP 硅晶体管
|
|||
|
|
CJ | 类似代替 | TO-92 |
PNP 硅晶体管
|
||
BC327
|
Diotec Semiconductor | 类似代替 | TO-92 |
PNP 硅晶体管
|
||
BC327
|
Philips | 类似代替 | TO-92 |
PNP 硅晶体管
|
||
BC327
|
VISHAY | 类似代替 |
PNP 硅晶体管
|
|||
BC327-16
|
General Semiconductor | 完全替代 |
Transistor: PNP; bipolar; 50V; 800mA; 625mW; TO92
|
|||
BC327-16
|
Micro Commercial Components | 完全替代 | TO-92 |
Transistor: PNP; bipolar; 50V; 800mA; 625mW; TO92
|
||
BC32725BU
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC32725BU 单晶体管 双极, PNP, -45 V, 100 MHz, 625 mW, -800 mA, 100 hFE
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