Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 800mA
Technical parameters/minimum current amplification factor (hFE): 100
Technical parameters/Maximum current amplification factor (hFE): 630
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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General Semiconductor | 功能相似 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
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BC327-40
|
NXP | 功能相似 | TO-92 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC327-40
|
Philips | 功能相似 | TO-92-3 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC327-40
|
Semtech Corporation | 功能相似 |
Trans GP BJT PNP 45V 0.8A 625mW Automotive 3Pin TO-92 Ammo
|
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BC32725BU
|
ON Semiconductor | 功能相似 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC32725BU 单晶体管 双极, PNP, -45 V, 100 MHz, 625 mW, -800 mA, 100 hFE
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