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Description Single transistor bipolar, PNP, -45 V, 100 MHz, 625 mW, -800 mA, 100 hFE
Product QR code
Packaging TO-226-3
Delivery time
Packaging method Bag
Standard packaging quantity 1
0.35  yuan 0.35yuan
20+:
$ 0.4725
50+:
$ 0.4375
100+:
$ 0.4200
300+:
$ 0.4060
500+:
$ 0.3955
1000+:
$ 0.3885
5000+:
$ 0.3815
10000+:
$ 0.3745
Quantity
20+
50+
100+
300+
500+
Price
$0.4725
$0.4375
$0.4200
$0.4060
$0.3955
Price $ 0.4725 $ 0.4375 $ 0.4200 $ 0.4060 $ 0.3955
Start batch production 20+ 50+ 100+ 300+ 500+
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(1001) Minimum order quantity(20)
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Technical parameters/frequency: 100 MHz

Technical parameters/number of pins: 3

Technical parameters/dissipated power: 625 mW

Technical parameters/breakdown voltage (collector emitter): 45 V

Technical parameters/minimum current amplification factor (hFE): 160 @100mA, 1V

Technical parameters/rated power (Max): 625 mW

Technical parameters/DC current gain (hFE): 100

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 625 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/packaging: TO-226-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bag

Other/Manufacturing Applications: Audio, power management, industrial

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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