Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 610pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF830S
|
International Rectifier | 功能相似 |
MOSFET N-CH 500V 4.5A D2PAK
|
|||
IRF830S
|
Vishay Siliconix | 功能相似 | TO-263-3 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830S
|
VISHAY | 功能相似 | TO-263 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
|
|
Vishay Precision Group | 功能相似 | D2PAK-220 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
|
|
Vishay Intertechnology | 功能相似 | D2PAK |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830SPBF
|
International Rectifier | 功能相似 |
MOSFET N-CH 500V 4.5A D2PAK
|
|||
IRF830STRL
|
Vishay Semiconductor | 功能相似 | 3 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830STRL
|
VISHAY | 功能相似 | TO-263 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
SPB04N50C3
|
Infineon | 功能相似 | TO-263-3 |
酷MOS功率晶体管 Cool MOS Power Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review