Technical parameters/rated voltage (DC): 560 V
Technical parameters/rated current: 4.50 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 950 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 50 W
Technical parameters/input capacitance: 470 pF
Technical parameters/gate charge: 22.0 nC
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 470pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10 mm
External dimensions/width: 9.25 mm
External dimensions/height: 4.4 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
VISHAY | 功能相似 | TO-263-3 |
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IRF830STRLPBF
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R5007ANJTL
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ROHM Semiconductor | 功能相似 | TO-263-3 |
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