Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 40 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Continuous drain current (Ids): | 7A |
|
Technical parameters/rise time: | 22 ns |
|
Technical parameters/Input capacitance (Ciss): | 500pF @25V(Vds) |
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Technical parameters/rated power (Max): | 40 W |
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Technical parameters/descent time: | 25 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 40W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Not For New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
R5207ANDTL
|
ROHM Semiconductor | 功能相似 | TO-252-3 |
N 通道 MOSFET 晶体管,ROHM ### MOSFET 晶体管,ROHM
|
||
SPB04N50C3
|
Infineon | 功能相似 | TO-263-3 |
酷MOS功率晶体管 Cool MOS Power Transistor
|
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