Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 1.50 A
Technical parameters/drain source resistance: 1.50 Ω (max)
Technical parameters/input capacitance: 610 pF
Technical parameters/gate charge: 38.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500V (min)
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 16.0 ns
Encapsulation parameters/installation method: Surface Mount
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Precision Group | 完全替代 | D2PAK-220 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
|
|
Vishay Intertechnology | 完全替代 | D2PAK |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830SPBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 500V 4.5A D2PAK
|
|||
IRF830STRL
|
Vishay Semiconductor | 完全替代 | 3 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830STRL
|
VISHAY | 完全替代 | TO-263 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830STRLPBF
|
VISHAY | 类似代替 | TO-263-3 |
MOSFET N-CH 500V 4.5A D2PAK
|
||
IRF830STRLPBF
|
Vishay Intertechnology | 类似代替 |
MOSFET N-CH 500V 4.5A D2PAK
|
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