Technical parameters/rated power: 66 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.205 Ω
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 66 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 58 ns
Technical parameters/Input capacitance (Ciss): 760pF @25V(Vds)
Technical parameters/descent time: 46 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 66W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Automotive, automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR5410PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR5410PBF 晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
|
||
IRFR5410TRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
HEXFET® P 通道功率 MOSFET，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。
|
||
IRFR5410TRRPBF
|
International Rectifier | 完全替代 | DPAK-252 |
P沟道 100V 13A
|
||
IRFR5410TRRPBF
|
Infineon | 完全替代 | TO-252-3 |
P沟道 100V 13A
|
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