Technical parameters/rated voltage (DC): | -100 V |
|
Technical parameters/rated current: | -13.0 A |
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Technical parameters/drain source resistance: | 0.205 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 66 W |
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Technical parameters/product series: | IRFR5410 |
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Technical parameters/drain source voltage (Vds): | -100 V |
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Technical parameters/Continuous drain current (Ids): | -13.0 A |
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Technical parameters/rise time: | 58.0 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | DPAK-252 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | DPAK-252 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR5410
|
Infineon | 完全替代 | TO-252-3 |
INFINEON AUIRFR5410 晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
|
||
IRFR5410PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR5410PBF 晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
|
||
IRFR5410TRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
HEXFET® P 通道功率 MOSFET,Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。
|
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