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Description MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.205Ω; ID -13A; D-Pak (TO-252AA); PD 66W
Product QR code
Packaging DPAK-252
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.09  yuan 2.09yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(3363) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

-100 V

 

Technical parameters/rated current:

-13.0 A

 

Technical parameters/drain source resistance:

0.205 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

66 W

 

Technical parameters/product series:

IRFR5410

 

Technical parameters/drain source voltage (Vds):

-100 V

 

Technical parameters/Continuous drain current (Ids):

-13.0 A

 

Technical parameters/rise time:

58.0 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

DPAK-252

 

Dimensions/Length:

6.73 mm

 

Dimensions/Height:

2.39 mm

 

Dimensions/Packaging:

DPAK-252

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AUIRFR5410 AUIRFR5410 Infineon 完全替代 TO-252-3
INFINEON AUIRFR5410 晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
PDF
IRFR5410PBF IRFR5410PBF International Rectifier 类似代替 TO-252-3
INFINEON IRFR5410PBF 晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
PDF
IRFR5410TRPBF IRFR5410TRPBF International Rectifier 完全替代 TO-252-3
HEXFET® P 通道功率 MOSFET,Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。
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