Technical parameters/rated power: 66 W
Technical parameters/number of channels: 1
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 66 W
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 58 ns
Technical parameters/Input capacitance (Ciss): 760pF @25V(Vds)
Technical parameters/rated power (Max): 66 W
Technical parameters/descent time: 46 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 66W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRFR5410
|
Infineon | 完全替代 | TO-252-3 |
INFINEON AUIRFR5410 晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
|
||
IRFR5410PBF
|
International Rectifier | 类似代替 | TO-252-3 |
INFINEON IRFR5410PBF 晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
|
||
IRFR5410TRPBF
|
International Rectifier | 完全替代 | TO-252-3 |
HEXFET® P 通道功率 MOSFET，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 P 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review