Technical parameters/rated voltage (DC): -25.0 V
Technical parameters/rated current: -20.0 mA
Technical parameters/drain source resistance: 300 Ω
Technical parameters/polarity: P-Channel
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 11pF @10V(Vgs)
Technical parameters/rated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | CASE 318-07 |
FAIRCHILD SEMICONDUCTOR MMBFJ177 晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET
|
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MMBFJ177
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ177 晶体管, JFET, JFET, 30 V, -1.5 mA, -20 mA, 2.5 V, SOT-23, JFET
|
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