Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: 20.0 mA
Technical parameters/breakdown voltage: 30.0 V|30 V
Technical parameters/drain source resistance: 300 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 225 mW
Technical parameters/drain source voltage (Vds): 30.0 V
Technical parameters/breakdown voltage of gate source: 30.0 V
Technical parameters/Continuous drain current (Ids): 10.8 mA
Technical parameters/rated power (Max): 225 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ177@215
|
NXP | 类似代替 | SOT-23-3 |
PMBFJ177@215
|
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