Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/Continuous drain current (Ids): 60.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBFJ310
|
PANJIT Touch Screens | 类似代替 |
FAIRCHILD SEMICONDUCTOR MMBFJ310 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
|
|||
MMBFJ310
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBFJ310 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
|
||
MMBFJ310LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBFJ310LT1G 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
|
||
|
|
Motorola | 完全替代 |
ON SEMICONDUCTOR MMBFU310LT1G 晶体管, JFET, JFET, 25 V, 24 mA, 60 mA, 6 V, SOT-23, JFET
|
|||
PMBFJ108,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PMBFJ108,215 晶体管, JFET, JFET, -25 V, 80 mA, -3 V, SOT-23
|
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