Technical parameters/frequency: 450 MHz
Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 60 mA
Technical parameters/rated power: 350 mW
Technical parameters/breakdown voltage: -25.0 V
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/Continuous drain current (Ids): 60.0 mA
Technical parameters/gain: 12 dB
Technical parameters/test current: 10 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ETC1 | 类似代替 |
NXP BFR31 晶体管, JFET, JFET, 1 mA, 5 mA, -2.5 V, SOT-23, JFET
|
|||
MMBFJ310.*
|
Fairchild | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBFJ310.* 场效应管, JFET, N沟道, -25V, SOT-23
|
||
|
|
ON Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBFJ310.* 场效应管, JFET, N沟道, -25V, SOT-23
|
||
MMBFJ310LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBFJ310LT1G 晶体管, JFET, JFET, -25 V, 24 mA, 60 mA, -6.5 V, SOT-23, JFET
|
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