Technical parameters/breakdown voltage: -25.0 V|25 V
Technical parameters/drain source resistance: 8 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/breakdown voltage of gate source: 25 V
Technical parameters/Input capacitance (Ciss): 30pF @10V(Vgs)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Audio, Power Management, Industrial, Audio, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF4392LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBF4392LT1G 晶体管, JFET, JFET, 30 V, 25 mA, 75 mA, -5 V, SOT-23, JFET
|
||
|
|
Rochester | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBF5459. 场效应管, JFET, N沟道, -25V, SOT-23
|
||
MMBF5459
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBF5459. 场效应管, JFET, N沟道, -25V, SOT-23
|
||
|
|
Philips | 类似代替 |
N沟道FET的结 N-channel junction FETs
|
|||
PMBFJ108
|
NXP | 类似代替 | SOT-23-3 |
N沟道FET的结 N-channel junction FETs
|
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