Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage: 25 V
Technical parameters/Input capacitance (Ciss): 7pF @15V(Vds)
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management, audio
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SMMBFJ310LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
晶体管, 射频FET, 25 V, 225 mW, SOT-23
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||
SST5484-T1-E3
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Vishay Intertechnology | 功能相似 | SOT-23 |
JFET P-CH 35V 1mA SOT-23
|
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SST5485-E3
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VISHAY | 功能相似 | TO-236 |
JFET P-CH 35V 4mA SOT-23
|
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SST5485-E3
|
Vishay Semiconductor | 功能相似 | TO-236 |
JFET P-CH 35V 4mA SOT-23
|
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