Technical parameters/rated current: 10 mA
Technical parameters/halogen-free state: Halogen Free
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 225 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/breakdown voltage of gate source: 25 V
Technical parameters/gain: 12 dB
Technical parameters/test current: 10 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF5458
|
Fairchild | 类似代替 | SOT-23-3 |
N 通道 JFET，Fairchild Semiconductor ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
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