Technical parameters/frequency: 2496MHz ~ 2690MHz
Technical parameters/rated current: 10 µA
Technical parameters/output power: 32 W
Technical parameters/gain: 14.9 dB
Technical parameters/test current: 500 mA
Technical parameters/operating temperature (Max): 225 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/rated voltage: 28 VDC
Technical parameters/power supply voltage: 28 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 9
Encapsulation parameters/Encapsulation: NI-880X-4L4S-8
External dimensions/packaging: NI-880X-4L4S-8
Physical parameters/operating temperature: -40℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MRF6S23100HSR3
|
Freescale | 功能相似 | NI-780S-3 |
Trans RF MOSFET N-CH 68V 3Pin NI-780S T/R
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||
MRF8S26120HR3
|
NXP | 功能相似 | NI-780H-2L |
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV8 2.6GHZ 27W NI780
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MRF8S26120HR3
|
Freescale | 功能相似 | NI-780 |
射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV8 2.6GHZ 27W NI780
|
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