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Model MRF8S26120HR3
Description Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV8 2.6GHZ 27W NI780
Product QR code
Brand: NXP
Packaging NI-780H-2L
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
518.72  yuan 518.72yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6505) Minimum order quantity(1)
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Technical parameters/frequency:

2.69 GHz

 

Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/output power:

28 W

 

Technical parameters/gain:

15.6 dB

 

Technical parameters/test current:

900 mA

 

Technical parameters/operating temperature (Max):

225 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/rated voltage:

65 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

NI-780H-2L

 

Dimensions/Packaging:

NI-780H-2L

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
AFT26H160-4S4R3 AFT26H160-4S4R3 NXP 功能相似 NI-880X-4L4S-8
RF Power Transistor,2496 to 2690MHz, 100W, Typ Gain in dB is 14.9 @ 2496MHz, 28V, LDMOS, SOT1798
PDF
MRF6S23100HR3 MRF6S23100HR3 NXP 类似代替 NI-780H-2L
Trans RF MOSFET N-CH 68V 3Pin NI-780 T/R
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