Technical parameters/frequency: 2.69 GHz
Technical parameters/output power: 28 W
Technical parameters/gain: 15.6 dB
Technical parameters/test current: 900 mA
Technical parameters/rated voltage: 65 V
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: NI-780
External dimensions/packaging: NI-780
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AFT26H160-4S4R3
|
NXP | 功能相似 | NI-880X-4L4S-8 |
RF Power Transistor,2496 to 2690MHz, 100W, Typ Gain in dB is 14.9 @ 2496MHz, 28V, LDMOS, SOT1798
|
||
MRF6S23100HR3
|
NXP | 类似代替 | NI-780H-2L |
Trans RF MOSFET N-CH 68V 3Pin NI-780 T/R
|
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