Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.8A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: TO-116
External dimensions/packaging: TO-116
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6989
|
Microsemi | 完全替代 | DIP-14 |
多个( QUAD ) NPN硅双列直插式和FLATPACK开关晶体管 MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
|
||
JANTX2N6989
|
Aeroflex | 功能相似 | TO-116 |
Trans GP BJT NPN 50V 0.8A 14Pin SBCDIP
|
||
JANTX2N6989
|
Microchip | 功能相似 |
Trans GP BJT NPN 50V 0.8A 14Pin SBCDIP
|
|||
JANTX2N6989
|
Semicoa Semiconductor | 功能相似 | DIP |
Trans GP BJT NPN 50V 0.8A 14Pin SBCDIP
|
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