Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP-14
External dimensions/packaging: DIP-14
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N6989
|
Aeroflex | 完全替代 | TO-116 |
Trans GP BJT NPN 50V 0.8A 14Pin TO-116
|
||
JANTX2N6989
|
Microchip | 完全替代 |
Trans GP BJT NPN 50V 0.8A 14Pin TO-116
|
|||
JANTX2N6989
|
Semicoa Semiconductor | 完全替代 | DIP |
Trans GP BJT NPN 50V 0.8A 14Pin TO-116
|
||
JANTXV2N6989
|
Raytheon | 完全替代 |
TO-116 NPN 50V 0.8A
|
|||
JANTXV2N6989
|
Microsemi | 完全替代 | TO-116 |
TO-116 NPN 50V 0.8A
|
||
JANTXV2N6989
|
Semicoa Semiconductor | 完全替代 | DIP |
TO-116 NPN 50V 0.8A
|
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