Technical parameters/dissipated power: 2 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Package parameters/number of pins: 14
Encapsulation parameters/Encapsulation: DIP
External dimensions/packaging: DIP
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTXV2N6989
|
Raytheon | 功能相似 |
NPN Bipolar junction transistor 50V
|
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JANTXV2N6989
|
Microsemi | 功能相似 | TO-116 |
NPN Bipolar junction transistor 50V
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||
JANTXV2N6989
|
Semicoa Semiconductor | 功能相似 | DIP |
NPN Bipolar junction transistor 50V
|
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