Technical parameters/polarity: NPN
Technical parameters/dissipated power: 175 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 20A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 175000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6341
|
ON Semiconductor | 类似代替 | TO-204-2 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
2N6341
|
Microsemi | 类似代替 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTX2N6284
|
Microsemi | 类似代替 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
|
|
Microchip | 类似代替 | TO-204 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
JANTX2N6284
|
M/A-Com | 类似代替 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
|||
JANTX2N6284
|
Aeroflex | 类似代替 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
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