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Model 2N6341
Description 高功率NPN硅晶体管 High-Power NPN Silicon Transistors
Product QR code
Packaging TO-204-2
Delivery time
Packaging method Tray
Standard packaging quantity 1
65.48  yuan 65.48yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(7899) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

150 V

 

Technical parameters/rated current:

25.0 A

 

Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

200 W

 

Technical parameters/breakdown voltage (collector emitter):

150 V

 

Technical parameters/Maximum allowable collector current:

25A

 

Technical parameters/minimum current amplification factor (hFE):

30 @10A, 2V

 

Technical parameters/maximum current amplification factor (hFE):

120

 

Technical parameters/rated power (Max):

200 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

200000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-204-2

 

Dimensions/Length:

39.37 mm

 

Dimensions/Width:

26.67 mm

 

Dimensions/Height:

8.51 mm

 

Dimensions/Packaging:

TO-204-2

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 200℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tray

 

Other/Minimum Packaging:

100

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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