Technical parameters/dissipated power: 175 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1250 @10A, 3V
Technical parameters/rated power (Max): 175 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 175000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6283
|
Microsemi | 完全替代 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
||
JANTXV2N6284
|
Aeroflex | 完全替代 | TO-3 |
NPN达林顿功率硅晶体管 NPN DARLINGTON POWER SILICON TRANSISTOR
|
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