Technical parameters/breakdown voltage: 17.6 V
Technical parameters/number of pins: 2
Technical parameters/clamp voltage: 25 V
Technical parameters/test current: 1 mA
Technical parameters/maximum reverse breakdown voltage: 17.6 V
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 17.6 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Manufacturing Applications: Computers and computer peripherals, communication and networking, medical, general, power management, consumer electronics, automation and process control, industrial
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 | DO-201 |
1500瓦峰值功率Mosorb齐纳瞬态电压抑制器 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors
|
||
1N6377
|
ON Semiconductor | 功能相似 | DO-201AD |
1500瓦峰值功率Mosorb齐纳瞬态电压抑制器 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors
|
||
1N6377RL4G
|
ON Semiconductor | 完全替代 | DO-201AD |
1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B，用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器，On Semiconductor
|
||
MPTE-015G
|
ON Semiconductor | 完全替代 | DO-201AD |
ESD 抑制器/TVS 二极管 15V 1500W Unidirectional
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review