Technical parameters/rated voltage (DC): 17.6 V
Technical parameters/rated power: 1.50 kW
Technical parameters/clamp voltage: 20.6 V
Technical parameters/test current: 1 mA
Technical parameters/peak pulse power: 1500 W
Technical parameters/minimum reverse breakdown voltage: 17.6 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: -65℃ ~ 175℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.50 mm
External dimensions/diameter: 5.30 mm
External dimensions/packaging: DO-201AD
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1.5KE15A
|
JXND | 功能相似 | DO-201 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Multicomp | 功能相似 | DO-201 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Fairchild | 功能相似 | DO-201AE |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
|
|
Microsemi | 功能相似 | Axial |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Diotec Semiconductor | 功能相似 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
|||
1.5KE15A
|
Semtech Corporation | 功能相似 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
|||
1.5KE15A
|
EIC | 功能相似 | DO-201 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Littelfuse | 功能相似 | DO-201 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Panjit | 功能相似 | DO-201AE |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15A
|
Brightking | 功能相似 | DO-201 |
Transil™ TVS 轴向单向 1500W,STMicroelectronics
|
||
1.5KE15CA
|
JXND | 功能相似 | DO-201 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Fairchild | 功能相似 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
|||
|
|
Vishay Semiconductor | 功能相似 | DO-201 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
|
|
Won-Top Electronics | 功能相似 | DO-214AE |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Diotec Semiconductor | 功能相似 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
|||
1.5KE15CA
|
CREATEK | 功能相似 | DO-201AD |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Multicomp | 功能相似 | DO-201 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Littelfuse | 功能相似 | DO-201 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Goodwork Semiconductor | 功能相似 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
|||
1.5KE15CA
|
ST Microelectronics | 功能相似 | DO-201-2 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Panjit | 功能相似 | DO-201AE |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
||
1.5KE15CA
|
Yangzhou Yangjie Electronic | 功能相似 |
STMICROELECTRONICS 1.5KE15CA TVS二极管, Transil 1.5KE系列, 双向, 12.8 V, 21.2 V, DO-201, 2 引脚
|
|||
1N6377G
|
ON Semiconductor | 类似代替 | DO-201AD |
1500W Mosorb™ 齐纳瞬态电压抑制器(单向) Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率:1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B,用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器,On Semiconductor
|
||
1N6377G
|
Littelfuse | 类似代替 | DO-201AD |
1500W Mosorb™ 齐纳瞬态电压抑制器(单向) Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率:1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B,用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器,On Semiconductor
|
||
1N6377RL4G
|
ON Semiconductor | 类似代替 | DO-201AD |
1500W Mosorb™ 齐纳瞬态电压抑制器(单向) Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率:1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 UL 497B,用于隔离回路保护 响应时间通常为 ### 瞬态电压抑制器,On Semiconductor
|
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