Technical parameters/polarity: NPN
Technical parameters/dissipated power: 140 W
Technical parameters/breakdown voltage (collector emitter): 90 V
Technical parameters/maximum allowable collector current: 50A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 140000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N6032
|
Microsemi | 完全替代 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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|
|
Boca Semiconductor | 功能相似 | 3 |
STMICROELECTRONICS TIP31A 单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
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TIP31A
|
ON Semiconductor | 功能相似 | TO-220-3 |
STMICROELECTRONICS TIP31A 单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
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TIP31A
|
Multicomp | 功能相似 | TO-220 |
STMICROELECTRONICS TIP31A 单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
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TIP31A
|
Fairchild | 功能相似 | TO-220-3 |
STMICROELECTRONICS TIP31A 单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
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TIP31A
|
NTE Electronics | 功能相似 |
STMICROELECTRONICS TIP31A 单晶体管 双极, NPN, 60 V, 40 W, 3 A, 50 hFE
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