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Model TIP31A

Description Power Transistors Complementary Silicon

Brand: ON Semiconductor

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

5+:

$ 1.6673

25+:

$ 1.5438

50+:

$ 1.4573

100+:

$ 1.4203

500+:

$ 1.3956

2500+:

$ 1.3647

5000+:

$ 1.3523

10000+:

$ 1.3338

Price	$ 1.6673	$ 1.5438	$ 1.4573	$ 1.4203	$ 1.3956
Start batch production	5+	25+	50+	100+	500+

Freight charges： In stock Freight rate：$13.00

Quantity：

Inventory(9999) Minimum order quantity(5)

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Specification parameters
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Technical parameters/rated voltage (DC): 60.0 V

Technical parameters/rated current: 3.00 A

Technical parameters/polarity: NPN

Technical parameters/dissipated power: 40 W

Technical parameters/gain bandwidth product: 3 MHz

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/maximum allowable collector current: 3A

Technical parameters/minimum current amplification factor (hFE): 10 @3A, 4V

Technical parameters/Maximum current amplification factor (hFE): 50

Technical parameters/rated power (Max): 2 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Technical parameters/dissipated power (Max): 2000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.28 mm

External dimensions/width: 4.82 mm

External dimensions/height: 9.28 mm

External dimensions/packaging: TO-220-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Other/Minimum Packaging: 50

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Contains Lead

Customs information/ECCN code: EAR99

Alternative material

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