Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 90 V
Technical parameters/maximum allowable collector current: 50A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N6032
|
Semelab | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
JANTX2N6032
|
Microsemi | 完全替代 | TO-3 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
||
JANTXV2N6032
|
Semelab | 完全替代 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
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