Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: 600 mA
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
SLKOR. | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Freescale | 类似代替 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
|||
MMBT2907
|
CJ | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Motorola | 类似代替 | CASE 318-08 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
|
|
YONGYUTAI | 类似代替 | SOT-23 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT2907
|
Fairchild | 类似代替 | SOT-23-3 |
单晶体管 双极, PNP, 40 V, 350 mW, 800 mA, 300 hFE
|
||
MMBT4403LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBT4403LT1G 单晶体管 双极, 通用, PNP, -40 V, 200 MHz, 300 mW, -600 mA, 200 hFE
|
||
MMBT4403LT3G
|
ON Semiconductor | 完全替代 | SOT-23-3 |
NPN 晶体管，最大 1A，ON Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。
|
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