Technical parameters/frequency: | 200 MHz |
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Technical parameters/rated voltage (DC): | -40.0 V |
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Technical parameters/rated current: | -600 mA |
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Technical parameters/rated power: | 225 mW |
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Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 225 mW |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 2V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/DC current gain (hFE): | 200 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.94 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Power Management, Industrial, Industrial, Power Management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free <Alternative material
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