Technical parameters/frequency: 300 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/gain bandwidth product: 300 MHz
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 300 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSCT3904LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
SOT-23 NPN 40V 0.2A
|
||
NSCT3904LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
SOT-23 NPN 40V 0.2A
|
||
SMMBT3904LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR SMMBT3904LT1G 新
|
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