Technical parameters/rated voltage (DC): | 40.0 V |
|
Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.2A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
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Technical parameters/rated power (Max): | 225 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT3904LT1G
|
onsemi | 类似代替 | - |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
||
MMBT3904LT1G
|
Leshan Radio | 类似代替 | SOT-23 |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
||
SMMBT3904LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR SMMBT3904LT1G 新
|
||
SMMBT3904LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
通用晶体管 General Purpose Transistor
|
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