Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 57 W
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 18A
Technical parameters/rise time: 28 ns
Technical parameters/Input capacitance (Ciss): 650pF @25V(Vds)
Technical parameters/descent time: 16 ns
Technical parameters/dissipated power (Max): 57W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR5505PBF
|
International Rectifier | 完全替代 | TO-252-3 |
INFINEON IRFR5505PBF 晶体管, MOSFET, P沟道, -18 A, -55 V, 110 mohm, -10 V, -4 V
|
||
IRFR5505PBF
|
Infineon | 完全替代 | TO-252-3 |
INFINEON IRFR5505PBF 晶体管, MOSFET, P沟道, -18 A, -55 V, 110 mohm, -10 V, -4 V
|
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